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| UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (PULSE) Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp Pc Tj Tstg RATING 400 400 5 200 400 1.3 150 -55 ~ +150 UNIT V V V mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collect-Base Breakdown Voltage Collect-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collect-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Reverse Transfer Capacitance Gain-Bandwidth Product Turn-on Time Turn-off Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO TEST CONDITIONS IC= 10A,IE=0 IC= 1mA,IB=0,RBE= IE= 10A,IC=0 VCB= 300V,IE=0 VEB=4V,IC=0 VCE=10V, Ic=50mA IC=50mA,IB=5mA IC=50mA,IB=5mA VCB=30V, f=1MHz VCB=30V,f=1MHz VCE=30V,IC=10mA See test circuit See test circuit MIN 400 400 5 TYP MAX UNIT V V V A A V V pF pF MHz s s hFE VCE(sat) VBE(sat) Cob Cre fT ton toff 60 0.6 0.1 0.1 200 1.0 4 3 70 0.25 5.0 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-027,A UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE D 60-120 E 100-200 TEST CIRCUIT (Unit : resistance : , capacitance : F) IB1 INPUT RB IB2 VR PW=20s Duty Cycle1% OUTPUT RL + 470 VCC=150V 50 + 100 VBE= -1V 10IB1= -10IB2=Ic=50mA RL=3k,RB=200 at Ic= 50mA ELECTRICAL CHARACTERISTICS CURVES 120 100 Collector Current,Ic-mA 80 60 IC-VBE VCE=10V I(tot) mA 5 3 2 DC Current Gain,hFE 100 7 5 3 2 10 1.4 hFE-Ic TA=70 TA=25 TA= -30 VCE=10V TA=25 40 TA=70 20 0 0 TA= -30 0.2 0.6 0.8 1.0 1.2 0.4 Base to Emitter Voltage,VBE-V 7 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 Collector Current,Ic- mA UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-027,A UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 10 7 5 3 2 1.0 7 5 3 2 Switch Time -Ic tstg Collector Current,Ic- mA tf ton 0.1 VCC=-150V 7 10IB1=-10IB2=IC 5 3 5 7 10 2 3 5 7 100 2 3 Collector Current,Ic- mA 1.6 Pc -Ta 5 ASO 7 Icp 5 1ms 3 Ic 2 10ms 100 7 5 3 100ms 2 DC Operation 1.0 7 5 3 Ta=25*Single pulse 2 Mounted on ceramic board 1.0 (250mm2*0.8mm) 7 5 3 5 7 10 2 3 5 7 100 2 3 5 CE-V Collector to Emitter Voltage,V 5 VCE(sat)-Ic Ic/IB=10 Switching Time,SW Time-s Collector Dissipation,Pc -W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Mounted on ceramic board (250mm2*0.8mm) 20 40 60 80 100 120 140 160 Ambient Temperature,Ta - Collector to Emitter Saturation Voltage,VCE(sat)-V 3 2 1.0 7 5 3 2 0.1 7 5 7 1.0 TA=70 TA=25, -30 2 3 5 7 10 2 3 5 7100 2 Collector Current,Ic- mA VBE(sat)-Ic 7 5 Base to Emitter Saturation Voltage,VBE(sat)-V 3 2 1.0 7 5 3 2 TA=70 7 1.0 3 TA=25 TA= -30 Ic/IB=10 5 7 100 2 3 5 7 10 2 3 Collector Current,Ic- mA UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-027,A UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R208-027,A |
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